Datasheet Details
| Part number | FDMC8882 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 403.64 KB |
| Description | MOSFET |
| Datasheet | FDMC8882-FairchildSemiconductor.pdf |
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Overview: FDMC8882 N-Channel Power Trench® MOSFET FDMC8882 N-Channel Power Trench® MOSFET 30 V, 16 A, 14.
| Part number | FDMC8882 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 403.64 KB |
| Description | MOSFET |
| Datasheet | FDMC8882-FairchildSemiconductor.pdf |
|
|
|
Max rDS(on) = 14.3 m: at VGS = 10 V, ID = 10.5 A Max rDS(on) = 22.5 m: at VGS = 4.5 V, ID = 8.3 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Application High side in DC - DC Buck Converters Notebook battery power management Load switch in Notebook Top Bottom Pin 1 S SG S MLP 3.3x3.3 DD D D D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Vo
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
FDMC8882 | N-Channel MOSFET | ON Semiconductor |
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