FDN336P Datasheet - Fairchild Semiconductor

single P-Channel MOSFET

FDN336P Features

* -1.3 A, -20 V. RDS(ON) = 0.20 Ω @ VGS = -4.5 V RDS(ON) = 0.27 Ω @ VGS= -2.5 V. Low gate charge (3.6 nC typical). High performance trench technology for extremely low RDS(ON). High power version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability

FDN336P General Description

This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electron.

FDN336P Datasheet (67.53 KB)

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Datasheet Details

Part number:

FDN336P

Manufacturer:

Fairchild Semiconductor

File Size:

67.53 KB

Description:

Single p-channel mosfet.

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FDN336P single P-Channel MOSFET Fairchild Semiconductor

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FDN336P Features

FDN336P General Description

Datasheet Details

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Description:

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