single p-channel 2.5v specified mosfet.
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-5 A, -20 V. RDS(on) = 0.045 Ω @ VGS = -4.5 V RDS(on) = 0.070 Ω @ VGS = -2.5 V
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Fast switching speed. High density cell design for extremely low .
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Load switch DC/DC converter Battery protection
D D D
D
5 6 7
4 3 2 1
SO-8
S
S
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G
8
Absolute.
This P-Channel enhancement mode power field effect transistors is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density processis especially tailored to minimize on-state resistance and provide superior sw.
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