FDS8876 mosfet equivalent, n-channel mosfet.
* rDS(on) = 8.2mΩ, VGS = 10V, ID = 12.5A
* rDS(on) = 10.2mΩ, VGS = 4.5V, ID = 11.4A
* High performance trench technology for extremely low
rDS(on)
* Low g.
* DC/DC converters
Branding Dash
1 2 3 4
SO-8
5
54 63 72 81
©2007 Fairchild Semiconductor Corporation FDS8876 Re.
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching s.
Image gallery
TAGS
Download (Size : 436.18KB)