FDS8926A mosfet equivalent, dual n-channel mosfet.
5.5 A, 30 V. RDS(ON) = 0.030 Ω @ VGS = 4.5 V RDS(ON) = 0.038 Ω @ VGS = 2.5 V. High density cell design for extremely low RDS(ON). Combines low gate threshold (fully enhan.
such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance .
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