N-Channel 5.5 A,30 V, RDS(ON)=0.030 Ω @ VGS=4.5 V RDS(ON)=0.038 Ω @ VGS=2.5 V. P-Channel -4 A,-20 V, RDS(ON)=0.055 Ω @ VGS=-4.5 V RDS(ON)=0.072 Ω @ VGS=-2.5 V. High densi.

such as notebook computer power management and other battery powered circuits where fast switching, low in-line power lo.

These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and pro.

FDS8926A

FDS89141

FDS89161

FDS89161LZ

FDS8934A

FDS8935

FDS8936A

FDS8936S

FDS8947A

FDS8949

FDS8949-F085

FDS8958

FDS8958A