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FDS8928A Datasheet - Fairchild Semiconductor

Dual-Channel MOSFET

FDS8928A Features

* N-Channel 5.5 A,30 V, RDS(ON)=0.030 Ω @ VGS=4.5 V RDS(ON)=0.038 Ω @ VGS=2.5 V. P-Channel -4 A,-20 V, RDS(ON)=0.055 Ω @ VGS=-4.5 V RDS(ON)=0.072 Ω @ VGS=-2.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual

FDS8928A General Description

These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices.

FDS8928A Datasheet (285.36 KB)

Preview of FDS8928A PDF

Datasheet Details

Part number:

FDS8928A

Manufacturer:

Fairchild Semiconductor

File Size:

285.36 KB

Description:

Dual-channel mosfet.

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FDS8928A Dual-Channel MOSFET Fairchild Semiconductor

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