FDS8936A Datasheet - Fairchild Semiconductor

Dual N-Channel MOSFET

FDS8936A Features

* 6 A, 30 V. R DS(ON) = 0.028 Ω @ VGS = 10 V, RDS(ON) = 0.040 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223

FDS8936A General Description

SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particula.

FDS8936A Datasheet (229.32 KB)

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FDS8936A

Manufacturer:

Fairchild Semiconductor

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229.32 KB

Description:

Dual n-channel mosfet.

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FDS8936A Dual N-Channel MOSFET Fairchild Semiconductor

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FDS8936A Features

FDS8936A General Description

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