FDS8936A mosfet equivalent, dual n-channel mosfet.
6 A, 30 V. R DS(ON) = 0.028 Ω @ VGS = 10 V, RDS(ON) = 0.040 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capabilit.
such as notebook computer power management and other battery powered circuits where fast switching, low in-line power lo.
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