FDS8936S Datasheet - Fairchild Semiconductor

Dual N-Channel MOSFET

FDS8936S Features

* Low gate charge. 5.0 A, 30 V. RDS(ON) = 0.040 Ω @ VGS = 10 V. High density cell design for extremely low R DS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 5 6

FDS8936S General Description

SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These devices are particula.

FDS8936S Datasheet (269.55 KB)

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FDS8936S

Manufacturer:

Fairchild Semiconductor

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269.55 KB

Description:

Dual n-channel mosfet.

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FDS8936S Dual N-Channel MOSFET Fairchild Semiconductor

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FDS8936S Features

FDS8936S General Description

Datasheet Details

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