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FDS8936S Dual N-Channel MOSFET

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Description

August 1997 FDS8936S Dual N-Channel Enhancement Mode Field Effect Transistor General.
SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

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Datasheet Specifications

Part number
FDS8936S
Manufacturer
Fairchild Semiconductor
File Size
269.55 KB
Datasheet
FDS8936S_FairchildSemiconductor.pdf
Description
Dual N-Channel MOSFET

Features

* Low gate charge. 5.0 A, 30 V. RDS(ON) = 0.040 Ω @ VGS = 10 V. High density cell design for extremely low R DS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 5 6

FDS8936S Distributors

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Dual N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FDS8936S-like datasheet