Datasheet4U Logo Datasheet4U.com
Fairchild (now onsemi) logo

FDS8947A Datasheet

Manufacturer: Fairchild (now onsemi)
FDS8947A datasheet preview

Datasheet Details

Part number FDS8947A
Datasheet FDS8947A_FairchildSemiconductor.pdf
File Size 264.44 KB
Manufacturer Fairchild (now onsemi)
Description Dual P-Channel MOSFET
FDS8947A page 2 FDS8947A page 3

FDS8947A Overview

SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook puter power management and other battery powered circuits...

FDS8947A Key Features

  • 4.0 A, -30 V. RDS(ON) = 0.052Ω @ VGS = -10 V RDS(ON) = 0.080Ω @ VGS = -4.5 V. High density cell design for extremely low
Fairchild (now onsemi) logo - Manufacturer

More Datasheets from Fairchild (now onsemi)

See all Fairchild (now onsemi) datasheets

Part Number Description
FDS8949 Dual N-Channel MOSFET
FDS89141 Dual N-Channel MOSFET
FDS89161 Dual N-Channel MOSFET
FDS89161LZ Dual N-Channel MOSFET
FDS8926A Dual N-Channel MOSFET
FDS8928A Dual-Channel MOSFET
FDS8934A Dual P-Channel MOSFET
FDS8935 MOSFET
FDS8936A Dual N-Channel MOSFET
FDS8936S Dual N-Channel MOSFET

FDS8947A Distributor

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts