Datasheet4U Logo Datasheet4U.com

FDS8947A Dual P-Channel MOSFET

FDS8947A Description

www.DataSheet4U.com March 1998 FDS8947A Dual P-Channel Enhancement Mode Field Effect Transistor General .
SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

FDS8947A Features

* -4.0 A, -30 V. RDS(ON) = 0.052Ω @ VGS = -10 V RDS(ON) = 0.080Ω @ VGS = -4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-2

📥 Download Datasheet

Preview of FDS8947A PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • FDS8949-F085 - Dual N-Channel MOSFET (ON Semiconductor)
  • FDS8935 - Dual P-Channel MOSFET (ON Semiconductor)
  • FDS8958A-F085 - Dual N&P-Channel MOSFET (ON Semiconductor)
  • FDS8958B - Dual N & P-Channel Power MOSFET (ON Semiconductor)
  • FDS8978 - N-Channel MOSFET (ON Semiconductor)
  • FDS8984 - N-Channel MOSFET (ON Semiconductor)
  • FDS8984-F085 - N-Channel MOSFET (ON Semiconductor)
  • FDS8984-F40 - N-Channel MOSFET (ON Semiconductor)

📌 All Tags

Dual P-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FDS8947A-like datasheet