FDS8947A Datasheet Dual P-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

FDS8947A dual p-channel mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	FDS8947A
Manufacturer	Fairchild (now onsemi)
File Size	264.44 KB
Description	Dual P-Channel MOSFET
Datasheet	FDS8947A Datasheet

General Description

SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Overview

www.DataSheet4U.com March 1998 FDS8947A Dual P-Channel Enhancement Mode Field Effect.

Key Features

-4.0 A, -30 V. RDS(ON) = 0.052Ω @ VGS = -10 V RDS(ON) = 0.080Ω @ VGS = -4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D2 D1 D1 D2 5 4 3 2 1 S FD 7A 4 89 pin 1 6 SO-8 S1 G1 S2 G2 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.

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