FDS8962C mosfet equivalent, dual n & p-channel powertrench mosfet.
* Q1: N-Channel 7.0A, 30V RDS(on) = 0.030Ω @ VGS = 10V RDS(on) = 0.044Ω @ VGS = 4.5V
* Q2: P-Channel -5A, -30V RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VG.
where low in-line power loss and fast switching are required.
D1 D1
D2
D2
5 6
Q2
4 3
SO-8
Pin 1
S1
G1
G2 S2
7.
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching.
Image gallery
Download