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FDS8960C Datasheet - Fairchild Semiconductor

FDS8960C Dual N & P-Channel PowerTrench MOSFET

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for l.

FDS8960C Features

* Q1: N-Channel RDS(on) = 0.024Ω @ VGS = 10V RDS(on) = 0.032Ω @ VGS = 4.5V

* Q2: P-Channel RDS(on) = 0.053Ω @ VGS =

* 10V RDS(on) = 0.087Ω @ VGS =

* 4.5V Fast switching speed RoHS compliant 7.0A, 35V

* 5A,

* 35V D1 D D1 D DD2 D2 D 5 6 7 Q2 4 3 Q1

FDS8960C_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FDS8960C

Manufacturer:

Fairchild Semiconductor

File Size:

201.21 KB

Description:

Dual n & p-channel powertrench mosfet.

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FDS8960C FDS8960C Dual P-Channel PowerTrench MOSFET Fairchild Semiconductor

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