FDS8962C Datasheet - Fairchild Semiconductor

FDS8962C Dual N & P-Channel PowerTrench MOSFET

These dual N- and P-Channel enhancement mode power ﬁeld effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for lo.

FDS8962C Features

* Q1: N-Channel 7.0A, 30V RDS(on) = 0.030Ω @ VGS = 10V RDS(on) = 0.044Ω @ VGS = 4.5V

* Q2: P-Channel -5A, -30V RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VGS = -4.5V

* Fast switching speed

* High power and handling capability in a widely used surface mount package General Desc

FDS8962C_FairchildSemiconductor.pdf