-25 V, -0.46 A continuous, -1.5 A Peak. RDS(ON) = 1.1 Ω @ VGS = -4.5 V RDS(ON) = 1.5 Ω @ VGS= -2.7 V. Very low level gate drive requirements allowing direct operation in .

such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltage.

This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This devi.

FDV304P-F169

FDV301N

FDV301N-F169

FDV302P

FDV303N

FDV305N

FDV-xx

FDV0530

FDV0618

FDV0620

FDV0630

FDV0840

FDVE0630