FDV304P Datasheet - Fairchild Semiconductor

Digital FET/ P-Channel

FDV304P Features

* -25 V, -0.46 A continuous, -1.5 A Peak. RDS(ON) = 1.1 Ω @ VGS = -4.5 V RDS(ON) = 1.5 Ω @ VGS= -2.7 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Compact industry standard SOT-23 surface

FDV304P General Description

This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in batte.

FDV304P Datasheet (63.92 KB)

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Datasheet Details

Part number:

FDV304P

Manufacturer:

Fairchild Semiconductor

File Size:

63.92 KB

Description:

Digital fet/ p-channel.

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FDV304P Digital FET P-Channel Fairchild Semiconductor

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FDV304P Features

FDV304P General Description

Datasheet Details

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