Key Features
- Avalanche Rugged Technology
- Rugged Gate Oxide Technology
- Lower Input Capacitance
- Improved Gate Charge
- Extended Safe Operating Area
- Lower Leakage Current : 10 µA (Max.) @ VDS = 400V
- Low RDS(ON) : 0.254 Ω (Typ.) IRF750A BVDSS = 400 V RDS(on) = 0.3 Ω ID = 15 A TO-220 1 2 3
- Drain
- Source
Datasheets by Manufacturer
- IRF750A — Inchange Semiconductor — N-Channel MOSFET Transistor
- IRF7504 — International Rectifier — Power MOSFET
- IRF7506PBF — International Rectifier — HEXFET Power MOSFET
- IRF7507PBF — International Rectifier — Power MOSFET
- IRF7507 — International Rectifier — Power MOSFET
- IRF7523D1 — International Rectifier — FETKY MOSFET
- IRF7524D1 — International Rectifier — FETKY MOSFET
- IRF7526D1 — International Rectifier — FETKY MOSFET
- IRF7530 — International Rectifier — Power MOSFET
- IRF7526D1PbF — International Rectifier — MOSFET & Schottky Diode
