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IRF750A - Advanced Power MOSFET

Features

  • Avalanche Rugged Technology.
  • Rugged Gate Oxide Technology.
  • Lower Input Capacitance.
  • Improved Gate Charge.
  • Extended Safe Operating Area.
  • Lower Leakage Current : 10 µA (Max. ) @ VDS = 400V.
  • Low RDS(ON) : 0.254 Ω (Typ. ) IRF750A BVDSS = 400 V RDS(on) = 0.3 Ω ID = 15 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuo.

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www.DataSheet4U.com Advanced Power MOSFET FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current : 10 µA (Max.) @ VDS = 400V ♦ Low RDS(ON) : 0.254 Ω (Typ.) IRF750A BVDSS = 400 V RDS(on) = 0.3 Ω ID = 15 A TO-220 1 2 3 1.Gate 2. Drain 3.
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