Part MRF6P9220HR3
Description RF Power Field Effect Transistor
Category Transistor
Manufacturer Freescale Semiconductor
Size 524.92 KB
Freescale Semiconductor

MRF6P9220HR3 Overview

Key Features

  • Characterized with Series Equivalent Large
  • Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Device Designed for Push
  • Pull Operation Only
  • Qualified Up to a Maximum of 32 VDD Operation
  • Integrated ESD Protection
  • Lower - Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
  • Low Gold Plating Thickness on Leads, 40μ″ Nominal
  • RoHS Compliant