MRF6P9220HR3 Description
Freescale Semiconductor Technical Data Document Number: 2, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband mercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, mon - source amplifier applications in 28 volt base station equipment.
MRF6P9220HR3 Key Features
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- Internally Matched for Ease of Use
- Device Designed for Push
- Pull Operation Only
- Qualified Up to a Maximum of 32 VDD Operation
- Integrated ESD Protection
- Lower Thermal Resistance Package
- Designed for Lower Memory Effects and Wide Instantaneous Bandwidth