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MRF6P9220HR3 Datasheet Rf Power Field Effect Transistor

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Overview: .. Freescale Semiconductor Technical Data Document Number: MRF6P9220H Rev. 2, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband mercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, mon - source amplifier applications in 28 volt base station equipment. • Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 1600 mA, Pout = 47 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 20 dB Drain Efficiency — 30% ACPR @ 750 kHz Offset — - 47.

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Device Designed for Push - Pull Operation Only.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • Lower Thermal Resistance Package.
  • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth.

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