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MRF6V2150NBR1 - RF Power FET

Download the MRF6V2150NBR1 datasheet PDF (MRF6V2150NR1 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for rf power fet.

Features

  • Characterized with Series Equivalent Large--Signal Impedance Parameters.
  • Qualified Up to a Maximum of 50 VDD Operation.
  • Integrated ESD Protection.
  • 225°C Capable Plastic Package.
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Document Number: MRF6V2150N Rev. 4, 4/2010 MRF6V2150NR1 MRF6V2150NBR1 10--450 MHz, 150 W, 50 V.

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Note: The manufacturer provides a single datasheet file (MRF6V2150NR1_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. • Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA, Pout = 150 Watts Power Gain — 25 dB Drain Efficiency — 68.3% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 150 Watts CW Output Power Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel.
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