MRF8P23080HSR3, MRF8P23080HR3 RF Power Field Effect Transistors

Freescale Semiconductor

MRF8P23080HSR3 Description

Freescale Semiconductor Technical Data Document Number: MRF8P23080H www.DataSheet4U.com Rev.0, 5/2010 RF Power Field Effect Transistors N *.

MRF8P23080HSR3 Features

* Production Tested in a Symmetrical Doherty Configuration
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Large
* Signal Load
* Pull Parameters and Common Source S
* Parameters
* Internally Matched for Ease of Use

MRF8P23080HSR3 Applications

* with frequencies from 2300 to 2400 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
* Typical Doherty Single
* Carrier W
* CDMA Performance: VDD = 28 Volts, IDQA = 280 mA, VGSB = 0.7 Vdc, Pout = 16 Watts Avg. , IQ Magnitude Clippin

📥 Download Datasheet

MRF8P23080HSR3 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF8P23080HSR3, MRF8P23080HR3. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: MRF8P23080HSR3, MRF8P23080HR3
Manufacturer: Freescale Semiconductor
File Size: 690.62 KB
Datasheet: MRF8P23080HR3_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors
Note: This datasheet PDF includes multiple part numbers: MRF8P23080HSR3, MRF8P23080HR3.
Please refer to the document for exact specifications by model.

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