MRF8P23080HSR3 transistors equivalent, rf power field effect transistors.
* Production Tested in a Symmetrical Doherty Configuration
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Large--Signal Load--P.
with frequencies from 2300 to 2400 MHz. Can be used in Class AB and Class C for all typical cellular base station modula.
0.8 pF Chip Capacitors 1.0 pF Chip Capacitors 18 pF Chip Capacitors 8.2 pF Chip Capacitors 1.0 μF, 50 V Chip Capacitors 10 pF Chip Capacitors 5.6 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 470 μF, 63 V Electrolytic Capacitors 50 Ω, 1/4 W Chip Res.
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