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MRF8P23080HSR3 - RF Power Field Effect Transistors

This page provides the datasheet information for the MRF8P23080HSR3, a member of the MRF8P23080HR3 RF Power Field Effect Transistors family.

Description

0.8 pF Chip Capacitors 1.0 pF Chip Capacitors 18 pF Chip Capacitors 8.2 pF Chip Capacitors 1.0 μF, 50 V Chip Capacitors 10 pF Chip Capacitors 5.6 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 470 μF, 63 V Electrolytic Capacitors 50 Ω, 1/4 W Chip Resistor 2500 MHz Band 90°, 3 dB Chip Hybrid Coupler

Features

  • Production Tested in a Symmetrical Doherty Configuration.
  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
  • Designed for Digital Predistortion Error Correction Systems.
  • RoHS Compliant.

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Other Datasheets by Freescale Semiconductor

Full PDF Text Transcription

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Freescale Semiconductor Technical Data Document Number: MRF8P23080H www.DataSheet4U.com Rev. 0, 5/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2300 to 2400 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQA = 280 mA, VGSB = 0.7 Vdc, Pout = 16 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 2300 MHz 2350 MHz 2400 MHz Gps (dB) 14.6 14.7 14.6 ηD (%) 42.0 41.6 41.4 Output PAR (dB) 6.7 6.8 6.6 ACPR (dBc) --29.5 --31.5 --32.
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