MRF8P20160HR3 - RF Power Field Effect Transistors

Motorola Semiconductor Products

Datasheet Details

Part number	MRF8P20160HR3
Manufacturer	Motorola Semiconductor Products
File Size	834.56 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF8P20160HR3 Datasheet

Overview

DataSheet.in Freescale Semiconductor Technical Data Document Number: MRF8P2160H Rev.

1, 7/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz.

Can be used in Class AB and Class C for all typical cellular base station modulation formats.

Key Features

Production Tested in a Symmetrical Doherty Configuration.
100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
Designed for Digital Predistortion Error Correction Systems.
RoHS Compliant.

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