MRF8P20160HR3 Datasheet (PDF) Download
Motorola Semiconductor
MRF8P20160HR3

Key Features

  • Production Tested in a Symmetrical Doherty Configuration
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate--Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • Symbol VDSS VGS VDD Tstg TC TJ Value --0.5, +65 --6.0, +10 32, +0 -- 65 to +150 150 225 Unit Vdc Vdc Vdc °C °C °C
  • Continuous use at maximum temperature will affect MTTF
  • Characteristic Table