MRF8P26080HSR3 Description
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2500 to 2700 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Typical Doherty Single--Carrier W--CDMA Characterization Performance:.
MRF8P26080HSR3 Key Features
- Production Tested in a Symmetrical Doherty Configuration
- 100% PAR Tested for Guaranteed Output Power Capability
- Characterized with Large--Signal Load--Pull Parameters and mon
- Internally Matched for Ease of Use
- Integrated ESD Protection
- Greater Negative Gate--Source Voltage Range for Improved Class C
- Designed for Digital Predistortion Error Correction Systems
- RoHS pliant
- In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel
- 0.5, +65 --6.0, +10