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MRFE6S9135HSR3, MRFE6S9135HR3 - N-Channel Enhancement-Mode Lateral MOSFETs

MRFE6S9135HSR3 Description

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFE6S9135H Rev.1, 11/2007 RF Power Field Effect Transistors N - Chan.
Part Number 2743019447 ATC100B390JT500XT 27291SL ATC100B2R0JT500XT EMVY250ADA330MF55G GRM55DR61H106KA88B ATC100B6R8JT500XT ATC100B4R7JT500XT EKME630EL.

MRFE6S9135HSR3 Features

* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Optim

MRFE6S9135HSR3 Applications

* with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment.
* Typical Single- Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 39 Wat

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: MRFE6S9135HSR3, MRFE6S9135HR3. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
MRFE6S9135HSR3, MRFE6S9135HR3
Manufacturer
Freescale Semiconductor
File Size
481.02 KB
Datasheet
MRFE6S9135HR3_FreescaleSemiconductor.pdf
Description
N-Channel Enhancement-Mode Lateral MOSFETs
Note
This datasheet PDF includes multiple part numbers: MRFE6S9135HSR3, MRFE6S9135HR3.
Please refer to the document for exact specifications by model.

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N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor
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