Datasheet4U Logo Datasheet4U.com

MRFE6S9135HSR3 Datasheet N-Channel Enhancement-Mode Lateral MOSFETs

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Download the MRFE6S9135HSR3 datasheet PDF. This datasheet also includes the MRFE6S9135HR3 variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRFE6S9135HR3_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

Overview

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFE6S9135H Rev.

1, 11/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.

The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment.

Key Features

  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • Optimized for Doherty.

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRFE6S9135HR3 N-Channel Enhancement-Mode Lateral MOSFETs
MRFE6S9130HR3 RF Power FET
MRFE6S9130HSR3 RF Power FET
MRFE6S9125NBR1 N-Channel Enhancement-Mode Lateral MOSFETs
MRFE6S9125NR1 N-Channel Enhancement-Mode Lateral MOSFETs
MRFE6S9160HR3 RF Power Field Effect Transistors
MRFE6S9160HSR3 RF Power Field Effect Transistors
MRFE6S9045NR1 RF Power FET
MRFE6S9060NR1 RF Power FET
MRFE6S9205HR3 RF Power Field Effect Transistors