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MRFE6S9135HSR3 Datasheet N-channel Enhancement-mode Lateral MOSFETs

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Overview: www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFE6S9135H Rev. 1, 11/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. • Typical Single- Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 39 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 21 dB Drain Efficiency — 32.3% Device Output Signal PAR — 6.4 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset — - 39.5 dBc in 3.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • Optimized for Doherty.

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRFE6S9135HR3 N-Channel Enhancement-Mode Lateral MOSFETs
MRFE6S9130HR3 RF Power FET
MRFE6S9130HSR3 RF Power FET
MRFE6S9125NBR1 N-Channel Enhancement-Mode Lateral MOSFETs
MRFE6S9125NR1 N-Channel Enhancement-Mode Lateral MOSFETs
MRFE6S9160HR3 RF Power Field Effect Transistors
MRFE6S9160HSR3 RF Power Field Effect Transistors
MRFE6S9045NR1 RF Power FET
MRFE6S9060NR1 RF Power FET
MRFE6S9205HR3 RF Power Field Effect Transistors

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