GSM2309S 20V P-Channel Enhancement Mode MOSFET
• -20V/-5.8A,RDS(ON)=33mΩ@VGS=-4.5V
• Improved dv/dt capability
• Fast switching
• Green Device Available
• Suit for -1.8V Gate Drive Applications
App.
Features
• -20V/-5.8A,RDS(ON)=33mΩ@VGS=-4.5V
• Improved dv/dt capability
• Fast switching
• Green Devi.
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