GSM2318A Overview
GSM2318A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications.
GSM2318A Key Features
- 40V/2.6A,RDS(ON)=68mΩ@VGS=10V
- 40V/2.2A,RDS(ON)=88mΩ@VGS=4.5V
- Exceptional on-resistance and
- SOT-23 package design