GSM2318A mosfet equivalent, n-channel mosfet.
* 40V/2.6A,RDS(ON)=68mΩ@VGS=10V
* 40V/2.2A,RDS(ON)=88mΩ@VGS=4.5V
* Super high density cell design for
extremely low RDS (ON)
* Exceptional on-resistance a.
Features
* 40V/2.6A,RDS(ON)=68mΩ@VGS=10V
* 40V/2.2A,RDS(ON)=88mΩ@VGS=4.5V
* Super high density cell design.
GSM2318A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other ba.
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