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2SD2150 - NPN Transistor

Features

  • Excellent current-to-gain characteristics Low collector saturation voltage VCE(sat) VCE(sat)=0.5V(max) for IC/IB=2A/0.1A 2SD2150(NPN).

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Datasheet preview – 2SD2150

Datasheet Details

Part number 2SD2150
Manufacturer HOTTECH
File Size 241.97 KB
Description NPN Transistor
Datasheet download datasheet 2SD2150 Datasheet
Additional preview pages of the 2SD2150 datasheet.

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Full PDF Text Transcription

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Plastic-Encapsulate Transistors FEATURES Excellent current-to-gain characteristics Low collector saturation voltage VCE(sat) VCE(sat)=0.5V(max) for IC/IB=2A/0.1A 2SD2150(NPN) MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation VCBO VCEO VEBO IC PC 40 20 6 2000 500 V V V mA mW Junction Temperature TJ 150 Storage Temperature Tstg -55-150 1. BASE 2. COLLECTO 3.
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