2SD157
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min)
- Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.0V(Max) @IC= 50m A
- Wide Area of Safe Operation
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in line-operated color TV chroma output circuits and sound output circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation @ TC=70℃
Junction Temperature
100 m A
℃
Tstg
Storage Temperature Range
-55~150
℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
INCHANGE Semiconductor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise...
