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2SD867 - NPN Transistor

General Description

: VCEO(SUS)= 110V(Min).

Excellent Safe Operating Area Low collector saturation voltage : VCE(sat)= 3.0V(Max)@ IC = 10A

and reliable operation.

High voltage high cu

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD867 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 110V(Min). ·Excellent Safe Operating Area ·Low collector saturation voltage : VCE(sat)= 3.0V(Max)@ IC = 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.