IRF9150 mosfet equivalent, p-channel mosfet.
*Static drain-source on-resistance:
RDS(on)≤0.15Ω
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
.
such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar swi.
*Be designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
*ABSOLUTE MAXIMUM RATINGS.
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