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IXFR14N100Q2 Datasheet HiPerFET Power MOSFET

Manufacturer: IXYS (now Littelfuse)

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Overview

Advanced Technical Data HiPerFET Power MOSFETs TM IXFR14N100Q2 Electrically Isolated Tab N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS, t = 1 min ISOL = 1mA, t = 1 s Mounting Force Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 1000 1000 ± 30 ± 40 9.5 56 14 50 2.5 20 200 -55 ...

+150 150 -55 ...

+150 300 2500 3000 V V V V A A A mJ J V/ns W °C °C °C °C V~ V~ z z z VDSS = = ID25 RDS(on) = www.DataSheet4U.com 1000 V 9.5 A 1.

Key Features

  • z z Double metal process for low gate resistance Epoxy meet UL 94 V-0, flammability classification Low RDS (on), low Qg Avalanche energy and current rated Fast intrinsic rectifier.

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