* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* Low Intrinsic Gate Resistance
* 2500V~ Electrical Isolation
* Fast Intrinsic Rectifier
* Avalanche Rated
* Low Package Inductance Advantages
* High Power Density
* Easy to Mount
IXFR15N100Q3 Datasheet (624.16 KB)
IXFR15N100Q3
IXYS
624.16 KB
Power mosfet.
Q3-Class HiperFETTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFR15N100Q3 D G S Symbol VDSS VDGR.
📁 Related Datasheet
IXFR15N80Q HiPerFET Power MOSFET (IXYS Corporation)
IXFR150N15 Power MOSFET (IXYS)
IXFR100N25 HiPerFET Power MOSFETs (IXYS Corporation)
IXFR102N30P Polar HiPerFET Power MOSFET (IXYS)
IXFR10N100F HiPerFET Power MOSFETs (IXYS Corporation)
IXFR10N100Q N-Channel Power MOSFET (IXYS Corporation)
IXFR120N20 Power MOSFET (IXYS Corporation)
IXFR120N25P PolarHT HiPerFET Power MOSFET (IXYS)
IXFR12N100F HiPerFET Power MOSFETs (IXYS Corporation)
IXFR12N100Q N-Channel Power MOSFET (IXYS Corporation)
