IXFC12N80P Datasheet | IXYS

Features z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<35p F) z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Fast intrinsic Rectifier Applications z DC-DC converters z Battery chargers z Switched-mode and resonant-mode power supplies z DC choppers z AC motor control Advantages z Easy assembly: no screws, or isolation foils required z Space savings z High power density z Low collector capacitance to ground (low EMI) ISOPLUS220TM (IXFC) E153432 Isolated back surface G = Gate S = Source D = Drain Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 2.5 m A VGS = ±30 V, VDS = 0 V VDS = VDSS VGS = 0 V TJ = 125° C Characteristic Values Min. Typ. Max. 800 3.0 5.5 ±100 25 750 V V n A µA µA VGS = 10 V, ID = IT, (Note 1) Pulse test, t ≤300 µs, duty cycle d ≤ 2 % 0.93 mΩ ..net © 2006 IXYS All rights reserved DS99603E(07/06) IXFC 12N80P Symbol Test Conditions Characteristic Values (TJ = 25° C unless otherwise specified) Min. Typ. Max. 12 18 2800 VGS = 0 V, VDS = 25 V, f = 1 MHz 210 19 21 VGS = 10 V, VDS = 0.5 VDSS, ID = IT RG = 10 Ω (External) 22 62 22 51 VGS= 10 V, VDS = 0.5 VDSS, ID = IT 13 19 S p F p F p F ns ns ns ns n C n C n C 1.05 ° C/W 0.21 ° C/W Note: Bottom heatsink (Pin 4) is electrically isolated from Pin 1,2, or 3. ISOPLUS220TM (IXFC) Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd Rth JC Rth CS VDS= 20 V; ID = IT, pulse test Source-Drain Diode Symbol IS ISM VSD trr IRM QRM Test Conditions VGS = 0 V Repetitive Characteristic Values (TJ = 25° C unless otherwise specified) Min. Typ. Max. 12 36 1.5 250 7 0.7 A A V ns A µC Ref: IXYS CO 0177 R0 IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IF = 12 A, -di/dt = 100 A/µs VR = 100 V, VGS = 0 V Note 1: Test Current...