IXFC12N80P Description
+150 300 260 2500 11..65/2.5..15 2 V V V V A A A mJ J V/ns W °C °C °C °C °C V~ N/lb.
IXFC12N80P Key Features
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation z Low drain to tab capacitance(<35pF) z Low RDS (on) HDMOSTM process z Rugged polysilicon gat