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IXFN360N15T2 Datasheet - IXYS Corporation

GigaMOS TrenchT2 HiperFET Power MOSFET

IXFN360N15T2 Features

* International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages Easy to Mount Space Savings High Power Density Applications 1.6mm (0.062 in.) from Case for 10s Plastic Bo

IXFN360N15T2 Datasheet (197.98 KB)

Preview of IXFN360N15T2 PDF

Datasheet Details

Part number:

IXFN360N15T2

Manufacturer:

IXYS Corporation

File Size:

197.98 KB

Description:

Gigamos trencht2 hiperfet power mosfet.
Advance Technical Information GigaMOSTM TrenchT2 HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN360N15T.

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IXFN360N15T2 GigaMOS TrenchT2 HiperFET Power MOSFET IXYS Corporation

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