* z z z z z z z International standard packages Dynamic dv/dt Rating Avalanche Rated Low RDS(ON), rugged PolarTM process Low QG Low Drain-to-Tab capacitance Low package inductance Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS
IXFP5N100P Datasheet (174.16 KB)
IXFP5N100P
IXYS Corporation
174.16 KB
Power mosfet.
Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA5N100P IXFH5N1.
📁 Related Datasheet
IXFP56N30X3 Power MOSFET (IXYS)
IXFP56N30X3 N-Channel MOSFET (INCHANGE)
IXFP05N100M High Voltage HiperFET (IXYS Corporation)
IXFP102N15T Power MOSFET (IXYS Corporation)
IXFP102N15T N-Channel MOSFET (INCHANGE)
IXFP10N60P Polar MOSFET (IXYS Corporation)
IXFP10N80P Power MOSFET (IXYS Corporation)
IXFP110N15T2 Power MOSFET (IXYS Corporation)
IXFP110N15T2 N-Channel MOSFET (INCHANGE)
IXFP12N50P Polar MOSFETs (IXYS Corporation)
