IXFP6N120P - Power MOSFET

Features

International Standard Packages.
Dynamic dv/dt Rating.
Avalanche Rated.
Fast Intrinsic Diode.
Low QG & RDS(on).
Low Drain-to-Tab Capacitance.
Low Package Inductance Advantages.
Easy to Mount.
Space Savings.

IXYS Corporation

Datasheet Details

Part number	IXFP6N120P
Manufacturer	IXYS
File Size	502.88 KB
Description	Power MOSFET
Datasheet	IXFP6N120P Datasheet
Additional preview pages of the IXFP6N120P datasheet.

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Full PDF Text Transcription

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PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA6N120P IXFP6N120P IXFH6N120P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1200 V 1200 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 6 18 3 300 10 250 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263) 10..65 / 2.2..14.6 Mounting Torque (TO-247 & TO-220) 1.13 / 10 N/lb Nm/lb.in TO-263 TO-220 TO-247 2.5 g 3.0 g 6.

Published: May 13, 2011 |