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2ED21084S06J - 650V half bridge gate driver

Download the 2ED21084S06J datasheet PDF. This datasheet also covers the 2ED2108S06F variant, as both devices belong to the same 650v half bridge gate driver family and are provided as variant models within a single manufacturer datasheet.

Description

The 2ED2108 (4) S06F (J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.

Features

  • Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology.
  • Negative VS transient immunity of 100 V.
  • Floating channel designed for bootstrap operation.
  • Operating voltages (VS node) upto + 650 V.
  • Maximum bootstrap voltage (VB node) of + 675 V.
  • Integrated ultra-fast, low resistance bootstrap diode.
  • Logic operational up to.
  • 11 V on VS Pin.
  • Negative voltage tolerance on inputs of.
  • 5 V.
  • Independent under voltage lockout for both chann.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2ED2108S06F-Infineon.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Infineon

Part Number Description
2ED2108S06F 650V half bridge gate driver
2ED2104S06F 650V half bridge gate driver
2ED21064S06J 650V high-side and low-side gate driver
2ED2106S06F 650V high-side and low-side gate driver
2ED21091S06F 650V half bridge gate driver

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2ED2108 (4) S06F (J) 2ED2108 (4) S06F (J) 650 V half bridge gate driver with integrated bootstrap diode Features  Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology  Negative VS transient immunity of 100 V  Floating channel designed for bootstrap operation  Operating voltages (VS node) upto + 650 V  Maximum bootstrap voltage (VB node) of + 675 V  Integrated ultra-fast, low resistance bootstrap diode  Logic operational up to –11 V on VS Pin  Negative voltage tolerance on inputs of –5 V  Independent under voltage lockout for both channels  Schmitt trigger inputs with hysteresis  3.
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