IMWH170R1K0M1
IMWH170R1K0M1 is 1700V SiC Trench MOSFET manufactured by Infineon.
Features
- VDSS = 1700 V at Tvj = 25°C
- IDDC = 5.4 A at TC = 25°C
- RDS(on) = 1000 mΩ at VGS = 12 V, Tvj = 25°C
- Optimized for fly-back topologies
- 12 V / 0 V gate-source voltage patible with most fly-back controllers
- Very low switching losses
- Benchmark gate threshold voltage, VGS(th) = 4.5 V
- Fully controllable dv/dt for EMI optimization
- .XT interconnection technology for best-in-class thermal performance
Potential applications
- General purpose drives (GPD)
- EV-Charging
- Energy Storage Systems (ESS)
- String inverter
- Uninterruptible power supplies
Product validation
- Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
Description
- gate 2
- drain 3
- source
TO-247 HCC
- 3Pin
2021-10-27 restricted Copyright © Infineon T
Type IMWH170R1K0M1
Package PG-TO247-3-STD-NN4.8
Marking 170M11K0
Datasheet .infineon.
Please read the sections "Important notice" and "Warnings" at the end of this document
Revision 1.00 2024-03-25
Cool Si C™ 1700 V Si C Trench MOSFET
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