IMWH170R1K0M1 mosfet equivalent, 1700v sic trench mosfet.
* VDSS = 1700 V at Tvj = 25°C
* IDDC = 5.4 A at TC = 25°C
* RDS(on) = 1000 mΩ at VGS = 12 V, Tvj = 25°C
* Optimized for fly-back topologies
* 12 V / 0.
* General purpose drives (GPD)
* EV-Charging
* Energy Storage Systems (ESS)
* String inverter
* Unin.
1
– gate 2
– drain 3
– source
TO-247 HCC
– 3Pin
2021-10-27
restricted Copyright © Infineon T
Type IMWH170R1K0M1
Package PG-TO247-3-STD-NN4.8
Marking 170M11K0
Datasheet www.infineo.
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