IMWH170R1K0M1 - 1700V SiC Trench MOSFET

Product Overview

Infineon

Datasheet Details

Part number	IMWH170R1K0M1
Manufacturer	Infineon
File Size	1.31 MB
Description	1700V SiC Trench MOSFET
Datasheet	IMWH170R1K0M1 Datasheet
Additional preview pages of the IMWH170R1K0M1 datasheet.

Product details

Description

1 gate 2 drain 3 source TO-247 HCC 3Pin 2021-10-27 restricted Copyright © Infineon T Type IMWH170R1K0M1 Package PG-TO247-3-STD-NN4.8 Marking 170M11K0 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2024-03-25 IMWH170R1K0M1 CoolSiC™ 1700 V SiC Trench MOSFET Table of contents Table of contents Description

Features

VDSS = 1700 V at Tvj = 25°C.
IDDC = 5.4 A at TC = 25°C.
RDS(on) = 1000 mΩ at VGS = 12 V, Tvj = 25°C.
Optimized for fly-back topologies.
12 V / 0 V gate-source voltage compatible with most fly-back controllers.
Very low switching losses.
Benchmark gate threshold voltage, VGS(th) = 4.5 V.
Fully controllable dv/dt for EMI optimization.
. XT interconnection technology for best-in-class thermal performance Potential appl.

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Published: May 13, 2024 |