900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Infineon Technologies Electronic Components Datasheet

PXAC201202FC Datasheet

Thermally-Enhanced High Power RF LDMOS FET

No Preview Available !

PXAC201202FC
Thermally-Enhanced High Power RF LDMOS FET
120 W, 28 V, 1800 – 2200 MHz
Description
The PXAC201202FC is a 120-watt LDMOS FET for use in multi-
standard cellular power amplifier applications in the 1800 to 2200 MHz
frequency band. Its asymmetric and dual-path design make it ideal for
Doherty amplifier designs. It features input and output matching, and
a thermally-enhanced package with earless flange. Manufactured with
Infineon's advanced LDMOS process, this device provides excellent
thermal performance and superior reliability.
PXAC201202FC
Package H-37248-4
Single-carrier 3GPP WCDMA
VDD = 28 V, IDQ = 240 mA, ƒ = 1805 MHz
3.84 MHz bandwidth
24 60
20 Efficiency 40
16 Gain
20
12
8 PAR @ 0.01% CCDF
0
-20
4 -40
0
30
35
40
45
c201202fc-v2-gr1a
-60
50
Average Output Power (dBm)
RF Specifications, 1880 MHz
Features
Broadband internal matching
Asymmetric Doherty design
- Main: P1dB = 35 W Typ
- Peak: P1dB = 80 W Typ
Broadband internal matching
CW performance in a Doherty configuration,
1805 MHz, 28 V
- Output power = 100 W P1dB
- Gain = 17.3 dB at 17.8 W Avg.
- Efficiency = 46% at 17.8 W Avg.
CW performance in a Doherty configuration,
2100 MHz, 28 V
- Output power = 15.8 W Avg.
- Gain = 15.5 dB
- Efficiency = 46%
Capable of handling 10:1 VSWR @ 28 V,
16 W (CW) output power
Integrated ESD protection: Human Body Model,
Class 1C (per JESD22-A114)
Low thermal resistance
Pb-free and RoHS compliant
One-carrier WCDMA Characteristics (tested in Infineon Doherty test fixture)
VDD = 28 V, VGS(peak) = 1.4 V, IDQ = 240 mA, POUT = 16 W average, ƒ = 1880 MHz. 3GPP WCDMA signal: 3.84 MHz band-
width, 10 dB PAR @0.01% probability on CCDF.
Characteristic
Symbol Min Typ Max Unit
Gain
Drain Efficiency
Gps
hD
16 17 — dB
43 46
%
Adjacent Channel Power Ratio
ACPR
— –29 –26 dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 05.1, 2016-06-22


Infineon Technologies Electronic Components Datasheet

PXAC201202FC Datasheet

Thermally-Enhanced High Power RF LDMOS FET

No Preview Available !

PXAC201202FC
RF Specifications, 2140 MHz
One-carrier WCDMA Characteristics (not subject to production test—verified by design/characterization in Infineon
Doherty test fixture)
VDD = 28 V, VGS(peak) = 1.2 V, IDQ = 240 mA, POUT = 16 W average, ƒ = 2140 MHz. 3GPP WCDMA signal: 3.84 MHz band-
width, 10 dB PAR @0.01% CCDF.
Characteristic
Symbol Min Typ Max Unit
Gain
Drain Efficiency
Gps
hD
16.0
39
16.5
42
dB
%
Adjacent Channel Power Ratio
ACPR
— –29 –27 dBc
DC Characteristics
Characteristic
Drain-source Breakdown Voltage
Drain Leakage Current
Gate Leakage Current
On-state Resistance (main)
(peak)
Operating Gate Voltage (main)
(peak)
Conditions
Symbol
VGS = 0 V, IDS = 10 mA
V(BR)DSS
VDS = 28 V, VGS = 0 V
IDSS
VDS = 63 V, VGS = 0 V
IDSS
VGS = 10 V, VDS = 0 V
IGSS
VGS = 10 V, VDS = 0.1 V
RDS(on)
VGS = 10 V, VDS = 0.1 V
RDS(on)
VDS = 28 V, IDQ = 242 mA VGS
VDS = 28 V, IDQ = 0 A
VGS
Min
65
2.5
0.5
Typ
0.3
0.16
2.69
0.7
Max
1.0
10.0
1.0
2.8
1.6
Unit
V
µA
µA
µA
W
W
V
V
Maximum Ratings
Parameter
Drain-source Voltage
Gate-source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (TCASE = 70°C, 100 W CW)
Symbol
VDSS
VGS
VDD
TJ
TSTG
RqJC
Value
65
–6 to +10
0 to +32
225
–65 to +150
0.7
Unit
V
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PXAC201202FC V2 R0
PXAC201202FC V2 R250
Data Sheet
Order Code
Package and Description
PXAC201202FCV2R0XTMA1
H-37248-4, ceramic open-cavity, earless
PXAC201202FCV2R250XTMA1 H-37248-4, ceramic open-cavity, earless
2 of 10
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Rev. 05.1, 2016-06-22


Part Number PXAC201202FC
Description Thermally-Enhanced High Power RF LDMOS FET
Maker Infineon
Total Page 10 Pages
PDF Download

PXAC201202FC Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET
Infineon





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy