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PXAC201202FC - Thermally-Enhanced High Power RF LDMOS FET

General Description

The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band.

Its asymmetric and dual-path design make it ideal for Doherty amplifier designs.

Key Features

  • input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC201202FC Package H-37248-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier 3GPP WCDMA VDD = 28 V, IDQ = 240 mA, ƒ = 1805 MHz 3.84 MHz bandwidth 24 60 20 Efficiency 40 16 Gain 20 12 8 PAR @ 0.01% CCDF 0 -20 4 -40 0 30 35 40 45 c201202fc-v2-gr1a -60 50 Avera.

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Datasheet Details

Part number PXAC201202FC
Manufacturer Infineon
File Size 399.56 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PXAC201202FC Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for Doherty amplifier designs. It features input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC201202FC Package H-37248-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier 3GPP WCDMA VDD = 28 V, IDQ = 240 mA, ƒ = 1805 MHz 3.84 MHz bandwidth 24 60 20 Efficiency 40 16 Gain 20 12 8 PAR @ 0.