PXAC203302FV
Description
The PXAC203302FV is a 330-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1880 to 2025 MHz frequency band. Features include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PXAC203302FV Package H-37275-4
Peak/Average Ratio, Gain (d B) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 900 m A, ƒ = 2025 MHz,
3GPP WCDMA signal, PAR = 10 d B, 3.84 MHz BW
24 60
Efficiency
20 40
16 20
Gain
12 0
PAR @ 0.01% CCDF
-20 -40
0 25 c203302fv_g1
-60
30 35 40 45 50 55
Average Output Power (d Bm)
Features
- Broadband internal input and output matching
- Asymmetrical Doherty design
- Main : P1d B = 130 W Typ
- Peak : P1d B =...
