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PXAC203302FV - Thermally-Enhanced High Power RF LDMOS FET

Description

The PXAC203302FV is a 330-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1880 to 2025 MHz frequency band.

Features

  • include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC203302FV Package H-37275-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 900 mA, ƒ = 2025 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 60 Efficiency 20 40 16 20 Gain 12 0 8 PAR @ 0.01% CCDF 4 -20 -40.

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Datasheet Details

Part number PXAC203302FV
Manufacturer Infineon
File Size 341.44 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PXAC203302FV Datasheet

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Full PDF Text Transcription

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PXAC203302FV Thermally-Enhanced High Power RF LDMOS FET 330 W, 28 V, 1880 – 2025 MHz Description The PXAC203302FV is a 330-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1880 to 2025 MHz frequency band. Features include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC203302FV Package H-37275-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 900 mA, ƒ = 2025 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 60 Efficiency 20 40 16 20 Gain 12 0 8 PAR @ 0.
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