• Part: PTFA181001F
  • Description: Thermally-Enhanced High Power RF LDMOS FET
  • Manufacturer: Infineon
  • Size: 418.90 KB
Download PTFA181001F Datasheet PDF
PTFA181001F page 2
Page 2
PTFA181001F page 3
Page 3

PTFA181001F Key Features

  • Thermally-enhanced packages Broadband internal matching Typical EDGE performance at 1879.8 MHz, 28 V
  • Average output power = 45 W
  • Linear Gain = 16.5 dB
  • Efficiency = 36%
  • EVM RMS = 1.8% Typical CW performance, 1880 MHz, 28 V
  • Output power at P-1dB = 120 W
  • Gain 15.5 dB
  • Efficiency = 52% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI dri
  • 28 -33 -38 -43 -48 -53 34 36 38 40
  • See Infineon distributor for future availability