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PTFA181001F - Thermally-Enhanced High Power RF LDMOS FET

Download the PTFA181001F datasheet PDF. This datasheet also covers the PTFA181001E variant, as both devices belong to the same thermally-enhanced high power rf ldmos fet family and are provided as variant models within a single manufacturer datasheet.

General Description

The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the DCS band.

Key Features

  • include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA181001E Package H-36248-2 PTFA181001F Package H-37248-2 2-Carrier WCDMA Drive-up VDD = 28 V, IDQ = 750 mA, ƒ = 1880 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing -23 35 Features.
  • Thermally-enhanced packages Broadband i.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PTFA181001E_InfineonTechnologies.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PTFA181001F
Manufacturer Infineon
File Size 418.90 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTFA181001F Datasheet

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Other Datasheets by Infineon

Part Number Description
PTFA181001E Thermally-Enhanced High Power RF LDMOS FET
PTFA181001GL Thermally-Enhanced High Power RF LDMOS FET
PTFA181001HL Thermally-Enhanced High Power RF LDMOS FET
PTFA180701E Thermally-Enhanced High Power RF LDMOS FET
PTFA180701F Thermally-Enhanced High Power RF LDMOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz www.DataSheet4U.net Description The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the DCS band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA181001E Package H-36248-2 PTFA181001F Package H-37248-2 2-Carrier WCDMA Drive-up VDD = 28 V, IDQ = 750 mA, ƒ = 1880 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing -23 35 Features • • • Thermally-enhanced packages Broadband internal matching Typical EDGE performance at 1879.