PTFA192401E Datasheet Thermally-Enhanced High Power RF LDMOS FET

Manufacturer: Infineon

Overview: PTFA192401E PTFA192401F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz www.DataSheet4U.

📥 Download Datasheet

PTFA192401E thermally-enhanced high power rf ldmos fet by Infineon - Datasheet Preview

Datasheet Details

Part number	PTFA192401E
Manufacturer	Infineon
File Size	441.79 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Download	PTFA192401E Download (PDF)

General Description

The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz.

Key Features

include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA192401E Package H-36260-2 PTFA192401F Package H-37260-2 Single-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1600 mA, ƒ = 1960 MHz, 3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping, PAR = 8.5 dB, 3.84 MHz BW -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 34 36 38 40 42 44 46 4.

More Datasheets from Infineon

Part Number	Description
PTFA192401F	Thermally-Enhanced High Power RF LDMOS FET
PTFA192001E	Thermally-Enhanced High Power RF LDMOS FET
PTFA192001F	Thermally-Enhanced High Power RF LDMOS FET
PTFA190451E	Thermally-Enhanced High Power RF LDMOS FET
PTFA190451F	Thermally-Enhanced High Power RF LDMOS FET
PTFA191001E	Thermally-Enhanced High Power RF LDMOS FET
PTFA191001F	Thermally-Enhanced High Power RF LDMOS FET
PTFA142401EL	Thermally-Enhanced High Power RF LDMOS FET
PTFA142401FL	Thermally-Enhanced High Power RF LDMOS FET
PTFA180701E	Thermally-Enhanced High Power RF LDMOS FET