PTFB183408SV
PTFB183408SV is High Power RF LDMOS Field Effect Transistor manufactured by Infineon.
High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805
- 1880 MHz
Description
The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTFB183408SV Package H-37275G-6/2
IMD & ACPR (d Bc) Drain Efficiency (%)
Two-carrier WCDMA 3GPP Drive-up
VDD = 30 V, IDQ = 2.6A, ƒ = 1880 MHz, 3GPP WCDMA signal, PAR = 8:1,
10 MHz carrier spacing, BW = 3.84 MHz
-25 35
-30 30
-35 IMD Low IMD Up
-40
25 20
-45 15
-50
ACPR
-55
Efficiency
-60 b183408sv gr1
36 38 40 42 44 46 48 50 52
Average Output Power (d Bm)
Features
- Broadband internal input and output matching
- Wide video bandwidth
- Typical single-carrier WCDMA performance, 1880 MHz, 30 V
- Output power = 125 W
- Efficiency = 31%
- Gain = 17 d B
- PAR = 5.5 d B @ 0.01% CCDF...
