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PTFB183408SV Datasheet

Manufacturer: Infineon
PTFB183408SV datasheet preview

Datasheet Details

Part number PTFB183408SV
Datasheet PTFB183408SV-InfineonTechnologies.pdf
File Size 250.19 KB
Manufacturer Infineon
Description High Power RF LDMOS Field Effect Transistor
PTFB183408SV page 2 PTFB183408SV page 3

PTFB183408SV Overview

The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band.

PTFB183408SV Key Features

  • 35 IMD Low IMD Up
  • Broadband internal input and output matching
  • Wide video bandwidth
  • Typical single-carrier WCDMA performance, 1880 MHz, 30 V
  • Output power = 125 W
  • Efficiency = 31%
  • Gain = 17 dB
  • PAR = 5.5 dB @ 0.01% CCDF probability
  • ACPR @ 5 MHz = -37 dBc
  • Increased negative gate-source voltage range for improved performance in Doherty amplifiers
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