Description
The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band.
Features
- include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB183408SV Package H-37275G-6/2
IMD & ACPR (dBc) Drain Efficiency (%)
Two-carrier WCDMA 3GPP Drive-up
VDD = 30 V, IDQ = 2.6A, ƒ = 1880 MHz, 3GPP WCDMA signal, PAR = 8:1,
10 MHz carrier spacing, BW = 3.84 MHz
-25 35
-30 30
-35 IMD Low IMD Up
-40
25 20
-45 15
-50
A.
PTFB183408SV Datasheet
