PTFB183404F transistors
high power rf ldmos field effect transistors.high power rf ldmos field effect transistors.
include input and output matching, high gain and thermally-enhanced package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these d.
in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced pac.
The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced pack.
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