PTFB183404F - High Power RF LDMOS Field Effect Transistors

This page provides the datasheet information for the PTFB183404F, a member of the PTFB183404E High Power RF LDMOS Field Effect Transistors family.

Product Overview

Infineon

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Datasheet Details

Part number	PTFB183404F
Manufacturer	Infineon
File Size	590.61 KB
Description	High Power RF LDMOS Field Effect Transistors
Datasheet	PTFB183404F Datasheet
Additional preview pages of the PTFB183404F datasheet.

PTFB183404F Product details

Description

The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band.

Features

include input and output matching, high gain and thermally-enhanced package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB183404E Package H-36275-8 PTFB183404F Package H-37275-6/2 IMD & ACPR (dBc) Drain Efficiency (%) Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 2.6A, ƒ = 1880 MHz, 3GPP WCDMA, PAR = 8:1, 10 MHz carrier spacing, BW = 3.84 MHz -25 35 -30 30 -35 IMD.

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Published: Nov 27, 2016 |