ITCH42008E2 Datasheet RF Power LDMOS FET

Manufacturer: Innogration

Overview: Innogration (Suzhou) Co., Ltd. 500-4200MHz, 8W, 28V RF Power LDMOS.

ITCH42008E2 rf power ldmos fet by Innogration - Datasheet Preview

Datasheet Details

Part number	ITCH42008E2
Manufacturer	Innogration
File Size	510.84 KB
Description	RF Power LDMOS FET
Download	ITCH42008E2 Download (PDF)

General Description

The ITCH42008E2 is a 8-watt, internally matched LDMOS FET, designed for cellular base station and ISM applications with frequencies from 500MHz to 4200 MHz Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 100 mA，Pulse Width =10us, Duty Cycle =12%.

3600-3800M demo： Frequency (MHz) Gain (dB) P_3dB (dBm) ηD (%) 3600 13.9 41.7 47.6 3700 15.3 41.2 46.8 3800 14.2 40.9 44.9 4000~4200M demo： Frequency (MHz) 4000 Gain (dB) 15.6 P_3dB (dBm) 40.6 ηD (%) 39.8 4100 14.8 40.8 41 4200 15.3 40.2 41.7 Highlight: The fixture is used same board different BOM.

Document Number: ITCH42008E2 Preliminary Datasheet V2.0 ITCH42008E2

Key Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Excellent thermal stability, low HCI drift.
Large Positive and Negative Gate/Source.

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