The ITCH42008E2 by Innogration is a RF Power LDMOS FET. Below is the official datasheet preview.
| Part number | ITCH42008E2 |
|---|---|
| Manufacturer | Innogration |
| File Size | 510.84 KB |
| Description | RF Power LDMOS FET |
| Datasheet |
 ITCH42008E2-Innogration.pdf
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The ITCH42008E2 is a 8-watt, internally matched LDMOS FET, designed for cellular base station and ISM applications with frequencies from 500MHz to 4200 MHz Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 100 mA，Pulse Width =10us, Duty Cycle =12%.3600-3800M demo： Frequency (MHz) Gain (dB) P_3dB (dBm) ηD (%) 3600 13.9 41.7 47.6 3700 15.3 41.2 46.8 3800 14.2 40.9 44.9 4000~4200M demo： Frequency (MHz) 4000 Gain (dB) 15.6 P_3dB (dBm)
📁 ITCH42008E2 Similar Datasheet
