ITCH42008E2 Key Features
- High Efficiency and Linear Gain Operations
- Integrated ESD Protection
- Internally Matched for Ease of Use
- Excellent thermal stability, low HCI drift
- Large Positive and Negative Gate/Source
- Part: ITCH42008E2
- Description: RF Power LDMOS FET
- Manufacturer: Innogration
- Size: 510.84 KB
Related Innogration Datasheets
| Part Number | Description |
|---|---|
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| ITCH16180B2 | High Power RF LDMOS FET |