ITCH09080GX Datasheet High Power RF LDMOS FET

Manufacturer: Innogration

ITCH09080GX high power rf ldmos fet by Innogration - Datasheet Preview

Datasheet Details

Part number	ITCH09080GX
Manufacturer	Innogration
File Size	547.48 KB
Description	High Power RF LDMOS FET
Datasheet	ITCH09080GX Datasheet

General Description

The ITCH09080GX is a 80-watt, unmatched LDMOS FETs, designed for Wide-band and Mobile radio applications with frequencies from HF to 1500MHz.

It can be used in Class AB/B and Class C for all typical modulation formats.

Document Number: ITCH09080GX Product Datasheet V1.0 ITCH09080GX Typical Class AB Performance (On Innogration fixture with device soldered): VDD = 28 Volts,Vgs=3.02V, IDQ = 450 mA, Pulse CW, Pulse Width =20us, Duty Cycle =10%.

Overview

Innogration (Suzhou) Co., Ltd.

80W, 28V High Power RF LDMOS FETs.

Key Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Excellent thermal stability, low HCI drift.
Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage.

More Datasheets from Innogration

Part Number	Description
ITCH15401D4	High Power RF LDMOS FET
ITCH16045A2	High Power RF LDMOS FET
ITCH16045A2E	High Power RF LDMOS FET
ITCH16180B2	High Power RF LDMOS FET
ITCH16180B2E	High Power RF LDMOS FET
ITCH16180B4	High Power RF LDMOS FET
ITCH16180B4E	High Power RF LDMOS FET
ITCH16230B2	High Power RF LDMOS FET
ITCH16230B2E	High Power RF LDMOS FET
ITCH18180B4	High Power RF LDMOS FET