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IRFMA450 - POWER MOSFET THRU-HOLE (Tabless TO-254AA)

Features

  • n n n n n n Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Dynamic dv/dt Rating Light-weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ P.

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Datasheet Details

Part number IRFMA450
Manufacturer International Rectifier
File Size 163.61 KB
Description POWER MOSFET THRU-HOLE (Tabless TO-254AA)
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Full PDF Text Transcription

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PD - 94362 IRFMA450 POWER MOSFET THRU-HOLE (Tabless TO-254AA) ® 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMA450 RDS(on) 0.415 Ω ID 12A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability.
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