HGTG5N120CND
features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is developmental type TA49309. The diode used in anti-parallel is developmental type TA49058. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49307.
Features
- 25A, 1200V, TC = 25o C
- 1200V Switching SOA Capability
- Typical Fall Time-
- - . 350ns at TJ = 150o C
- Short Circuit Rating
- Low Conduction Loss
- Temperature pensating SABER™ Model Thermal Impedance SPICE Model .intersil.
- Related Literature
- TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards”
Packaging
JEDEC TO-220AB ALTERNATE VERSION
Ordering Information
PART NUMBER HGTG5N120CND...
