CG2H30070F Overview
The CG2H30070F is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H30070F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H30070F ideal for linear and pressed amplifier circuits.
CG2H30070F Key Features
- 3.0 GHz application circuit
- 85 W POUT typical at 28 V
- 10 dB power gain
- 58% drain efficiency
- Internally matched