| Title | GaN FETs GaN HEMT DC-2.0GHz, 60 Watt |
| Description | The CG2H30070F is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H30070F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H30070F ideal for linear and compressed amplifier circuits. The tran... |
| Features |
• 0.5 - 3.0 GHz application circuit • 85 W POUT typical at 28 V • 10 dB power gain • 58% drain efficiency • Internally matched Applications • Broadband amplifiers • Electronic counter measures • Signal jamming • Milcom • Radar • Data link Typical Performance Over 0.5 - 3.0 GHz (TC = 25 °C) Parameter Small Signal Gain (S21) 500 MHz 16.7 1000 MH... |
| Datasheet |
 CG2H30070F Datasheet - 1.23MB |
| Distributor |
Mouser Electronics |
| Stock | 41 In stock |
| Price |
1 units: 351.36 USD 10 units: 336.51 USD
|
| BuyNow |
 BuyNow - Manufacturer a MACOM CG2H30070F
|
| Distributor | Stock | Price | BuyNow |
|---|---|---|---|
Mouser Electronics |
1 units: 351.36 USD 10 units: 336.51 USD |
BuyNow |
|
 Verical |
1 units: 605 USD |
BuyNow |
|
 Richardson RFPD |
1 units: 604.99 USD |
BuyNow |
