CG2H30070F - RF Power GaN HEMT

MACOM

CG2H30070F Description

CG2H30070F 70 W, DC - 4.0 GHz, 28 V, RF Power GaN HEMT .
The CG2H30070F is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT).

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Datasheet Details

Part number: CG2H30070F
Manufacturer: MACOM
File Size: 1.23 MB
Datasheet: CG2H30070F-MACOM.pdf
Description: RF Power GaN HEMT

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Power GaN HEMT MACOM

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