CG2H30070F Datasheet | MACOM Technology Solutions

70 W, DC - 4.0 GHz, 28 V, RF Power GaN HEMT Description The CG2H30070F is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H30070F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H30070F ideal for linear and pressed amplifier circuits. The transistor is available in a flange package. Package Types: 440224 PN’s: CG2H30070F Features - 0.5 - 3.0 GHz application circuit - 85 W POUT typical at 28 V - 10 dB power gain - 58% drain efficiency - Internally matched Applications -...