CG2H30070F - RF Power GaN HEMT
The CG2H30070F is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H30070F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandw
CG2H30070F Features
* 0.5 - 3.0 GHz application circuit
* 85 W POUT typical at 28 V
* 10 dB power gain
* 58% drain efficiency
* Internally matched
Applications
* Broadband amplifiers
* Electronic counter measures
* Signal jamming
* Milcom
