CG2H30070F hemt equivalent, rf power gan hemt.
* 0.5 - 3.0 GHz application circuit
* 85 W POUT typical at 28 V
* 10 dB power gain
* 58% drain efficiency
* Internally matched
Applications
* Bro.
GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H30070F ideal for linear and c.
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