CGH40120F Datasheet, Hemt, MACOM

CGH40120F Features

• Hemt
• Up to 2.5 GHz operation
• 20 dB small signal gain at 1.0 GHz
• 15 dB small signal gain at 2.0 GHz
• 120 W typical PSAT
• 70% efficiency at PSAT

PDF File Details

Part number:

CGH40120F

Manufacturer:

MACOM

File Size:

1.12MB

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📄 Datasheet

Description:

Rf power gan hemt. The CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 vol

CGH40120F Application

• Applications GaN HEMTs offer high efficiency, high gain, and wide bandwidth capabilities making the CGH40120F ideal for linear and compressed ampli

TAGS

CGH40120F

MACOM

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