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CGH40120F - RF Power GaN HEMT

General Description

The CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

Key Features

  • Up to 2.5 GHz operation.
  • 20 dB small signal gain at 1.0 GHz.
  • 15 dB small signal gain at 2.0 GHz.
  • 120 W typical PSAT.
  • 70% efficiency at PSAT.
  • 28 V operation.

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CGH40120F 120 W, RF Power GaN HEMT Description The CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain, and wide bandwidth capabilities making the CGH40120F ideal for linear and compressed amplifier circuits. The transistor is available in a flange package. Package Types: 440193 PN’s: CGH40120F Features • Up to 2.5 GHz operation • 20 dB small signal gain at 1.0 GHz • 15 dB small signal gain at 2.