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CGH40120F - RF Power GaN HEMT

MACOM

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Datasheet Details

Part number: CGH40120F
Manufacturer: MACOM
File Size: 1.12 MB
Datasheet: CGH40120F-MACOM.pdf
Description: RF Power GaN HEMT

CGH40120F Product details

Description

The CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT)..

Features

Up to 2.5 GHz operation.
20 dB small signal gain at 1.0 GHz.
15 dB small signal gain at 2.0 GHz.
120 W typical PSAT.
70% efficiency at PSAT.
28 V operation.

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Power GaN HEMT MACOM

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CGH40120F Stock/Price