CGH40120F hemt equivalent, rf power gan hemt.
* Up to 2.5 GHz operation
* 20 dB small signal gain at 1.0 GHz
* 15 dB small signal gain at 2.0 GHz
* 120 W typical PSAT
* 70% efficiency at PSAT
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GaN HEMTs offer high efficiency, high gain, and wide bandwidth capabilities making the CGH40120F ideal for linear and c.
The CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer h.
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