CGH40006P - RF Power GaN HEMT
RES, AIN, 0505, 470 Ohms (≤5% tolerance) RES, AIN, 0505, 10 Ohms (≤5% tolerance) RES, AIN, 0505, 150 Ohms (≤5% tolerance) CAP, 2.0 pF +/-0.1 pF, 0603, ATC 600S CAP, 4.7 pF +/-0.1 pF, 0603, ATC 600S CAP, 3.6 pF +/-0.1 pF, 0603, ATC 600S CAP, 8.2 pF +/-0.25, 0603, ATC 600S CAP, 470 pF +/-5%, 0603, 100
CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.
GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006P ideal for linear and compressed amplifier circuits.
The transistor is available in a solder-down, pill package.
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CGH40006P Features
* Up to 6 GHz Operation
* 13 dB Small Signal Gain at 2.0 GHz
* 11 dB Small Signal Gain at 6.0 GHz
* 8 W typical at PIN = 32 dBm
* 65 % Efficiency at PIN = 32 dBm
* 28 V Operation APPLICATIONS
* 2-Way Private Radio
* Broadband A
