* Up to 6 GHz Operation
* 13 dB Small Signal Gain at 2.0 GHz
* 11 dB Small Signal Gain at 6.0 GHz
* 8 W typical at PIN = 32 dBm
* 65 % Efficiency at PIN = 32 dBm
* 28 V Operation APPLICATIONS
* 2-Way Private Radio
* Broadband A
CGH40006P
Cree
1.60 MB
Rf power gan hemt.
CGH40006P
6 W, RF Power GaN HEMT
Cree’s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, oper.
📁 Related Datasheet
CGH40006P - RF Power GaN HEMT
(MACOM)
CGH40006P
6 W, RF Power GaN HEMT
Description
The CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH400.
CGH40006P - RF Power GaN HEMT
(Wolfspeed)
CGH40006P
6 W, RF Power GaN HEMT
Description
Wolfspeed’s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). Th.
CGH40006S - RF Power GaN HEMT
(MACOM)
CGH40006S
6 W, RF Power GaN HEMT, Plastic
Description
The CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). T.
CGH40006S - RF Power GaN HEMT
(Cree)
CGH40006S
6 W, RF Power GaN HEMT, Plastic
Cree’s CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH400.
CGH40006S - RF Power GaN HEMT
(Wolfspeed)
CGH40006S
6 W, RF Power GaN HEMT, Plastic
Description
Wolfspeed’s CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (.
CGH40010 - RF Power GaN HEMT
(MACOM)
CGH40010
10 W, DC - 6 GHz, RF Power GaN HEMT
Description
The CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT)..
CGH40010 - RF Power GaN HEMT
(Cree)
PRELIMINARY
CGH40010
10 W, RF Power GaN HEMT
Cree’s CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH4.
CGH40010 - RF Power GaN HEMT
(Wolfspeed)
CGH40010
10 W, DC - 6 GHz, RF Power GaN HEMT
Description
Wolfspeed’s CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor.
