CGH40006P RF Power GaN HEMT

Cree

Description

CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).The CGH40006P, oper.
RES, AIN, 0505, 470 Ohms (≤5% tolerance) RES, AIN, 0505, 10 Ohms (≤5% tolerance) RES, AIN, 0505, 150 Ohms (≤5% tolerance) CAP, 2.

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Datasheet Specifications

Part number: CGH40006P
Manufacturer: Cree
File Size: 1.60 MB
Datasheet: CGH40006P-Cree.pdf
Description: RF Power GaN HEMT

Features

* Up to 6 GHz Operation
* 13 dB Small Signal Gain at 2.0 GHz
* 11 dB Small Signal Gain at 6.0 GHz
* 8 W typical at PIN = 32 dBm
* 65 % Efficiency at PIN = 32 dBm

CGH40006P Distributors

📁 Related Datasheet

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CGH40006P Power GaN HEMT Cree

Cree CGH40006P-like datasheet