* 3.1 - 3.5 GHz Operation
* 75 W Typical Output Power
* 29 dB Power Gain
* 50-ohm Matched for Ease of Use
* Plastic Surface-Mount Package, 7x7 mm QFN .

Typical Performance Over 3.1 - 3.5 GHz (TC = 25ºC) Parameter Small Signal Gain1, 2 Output Power1, 3 Power Gain1, 3 Po.

The CMPA3135060S is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher.

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