NPT25100B amplifier equivalent, 28v gan power amplifier.
* GaN on Si HEMT D-Mode Power Amplifier
* Suitable for Linear & Saturated Applications
* Broadband Operation from 2.1 - 2.7 GHz
* 125 W P3dB Peak Envelope.
* Broadband Operation from 2.1 - 2.7 GHz
* 125 W P3dB Peak Envelope Power
* 90 W P3dB CW Power
* 10 W Li.
The NPT25100 GaN on silicon HEMT D-Mode amplifier optimized for 2.1 - 2.7 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 125 W in an industry standard plastic package with bolt down flange.
NPT25100B.
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