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NPT25100B - 28V GaN Power Amplifier

Download the NPT25100B datasheet PDF. This datasheet also covers the NPT25100 variant, as both devices belong to the same 28v gan power amplifier family and are provided as variant models within a single manufacturer datasheet.

General Description

The NPT25100 GaN on silicon HEMT D-Mode amplifier optimized for 2.1 - 2.7 GHz operation.

This device supports CW, pulsed, and linear operation with output power levels to 125 W in an industry standard plastic package with bolt down flange.

Rev.

Key Features

  • GaN on Si HEMT D-Mode Power Amplifier.
  • Suitable for Linear & Saturated.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NPT25100-MACOM.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by MACOM Technology Solutions

Part Number Description
NPT25100 28V GaN Power Amplifier
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GaN Power Amplifier, 28 V, 125 W 2.1 - 2.7 GHz Features • GaN on Si HEMT D-Mode Power Amplifier • Suitable for Linear & Saturated Applications • Broadband Operation from 2.1 - 2.7 GHz • 125 W P3dB Peak Envelope Power • 90 W P3dB CW Power • 10 W Linear Power @ 2% EVM for Single Carrier OFDM, 10.3 dB peak/avg., 10 MHz channel bandwidth • 16.5 dB Gain • 26% Efficiency • Characterized for Operation up to 32 V • 100% RF Tested • Thermally Enhanced Industry Standard Package • High Reliability Gold Metallization Process • RoHS* Compliant Applications • Defense Communications • Land Mobile Radio • Avionics • Wireless Infrastructure • ISM • VHF/UHF/L/S-Band Radar Description The NPT25100 GaN on silicon HEMT D-Mode amplifier optimized for 2.1 - 2.7 GHz operation.