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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD09MUP2
(a) 0.2+/-0.05 8.0+/-0.2 0.65+/-0.2 (c) (b) (b) 7.0+/-0.2 6.2+/-0.2 5.6+/-0.2 4.2+/-0.2
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W DESCRIPTION
RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.
(3.6)
(d)
FEATURES
•High power gain:
Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz
(4.5)
0.95+/-0.2
2.6+/-0.2
•High Efficiency: 50%min. (520MHz) •Integrated gate protection diode
INDEX MARK [Gate]
TOP VIEW
DETAIL A
SIDE VIEW
1.8+/-0.1
BOTTOM VIEW
Terminal No. (a)Drain [output] (b)Source [GND] (c)Gate [input] (d)Source
APPLICATION
SIDE VIEW
Standoff = max 0.
RD09MUP2 Datasheet
