RD09MUP2 Description
RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.
RD09MUP2 Key Features
- High power gain
- High Efficiency: 50%min. (520MHz) -Integrated gate protection diode
- Part: RD09MUP2
- Manufacturer: Mitsubishi Electric
- Size: 178.35 KB
Related Mitsubishi Electric Datasheets
| Part Number | Description |
|---|---|
| RD00HHS1 | RoHS Compliance |
| RD00HVS1 | RoHS Compliance |
| RD01MUS1 | Silicon RF Power MOS FET |
| RD01MUS2 | Silicon MOSFET Power Transistor |
| RD02MUS1 | Silicon MOSFET Power Transistor |